Researchers evaluated platinum–tungsten alloys as alternative extreme-ultraviolet lithography mask absorbers, examining film properties and imaging performance.

The study examined a platinum–tungsten alloy as an alternative mask absorber for extreme-ultraviolet (EUV) lithography. Semiconductor Engineering’s headline frames the material as showing potential for thinner absorbers in high-numerical-aperture (high-NA) EUV applications.

The paper is titled “Evaluating an alternative Pt-W alloy as a low-n EUV mask absorber: Film properties and imaging performance.” Its stated scope covers both the material’s film properties and its imaging performance.

Participating institutions included the Chinese Academy of Sciences, Jilin University, the State Key Laboratory of Advanced Manufacturing for Optical Systems, and the University of Chinese Academy of Sciences. The supplied excerpt does not provide alloy composition, absorber thickness, numerical imaging results, or a manufacturing-adoption announcement.