CXMT (长鑫存储) expects to launch DDR5 registered memory modules using its 4F² DRAM architecture by year-end.

CXMT (长鑫存储) president Cao Kanyu (曹堪宇) discussed the company’s memory-development progress at the Fourth Integrated Chips and Chiplets Conference (第四届集成芯片和芯粒大会) on October 10. His presentation covered dynamic random-access memory (DRAM) devices, the 4F² architecture, and hybrid bonding.

The announced product is a new generation of DDR5 registered dual in-line memory modules (RDIMMs) incorporating the technologies discussed. The update concerns memory modules, not a GPU, accelerator, server, or complete computing system.

The company expects a launch by the end of 2026; the sources do not establish that commercial shipments or mass production have begun. They also provide no module capacities, data rates, power measurements, production volumes, or customer qualification results.