Memory maker ChangXin Memory Technologies validated engineering samples of its sixth-generation platform using 4F² vertical-channel dynamic random-access memory.

ChangXin Memory Technologies disclosed the validation milestone during its October 30 third-quarter earnings discussion. The reports identify this as the company’s first explicit confirmation that its sixth-generation process platform uses 4F² vertical-channel dynamic random-access memory (DRAM), following earlier presentations about the architecture at academic forums.

The supplied reporting explains that engineering-sample validation means the platform’s core performance targets have been demonstrated on actual wafers. It distinguishes this stage from customer validation, which precedes entry into volume production; no numerical performance or yield results are supplied.

ChangXin had previously stated that it expected to introduce a server-memory product incorporating 4F² technology by year-end: a next-generation DDR5 registered dual in-line memory module (RDIMM), using double-data-rate fifth-generation memory. That remains a reported product plan, not confirmation of commercial shipment.

Separately, management reported negotiating long-term supply agreements with multiple leading customers, without providing contract quantities, prices, or execution details. Another message reported gross margins of 86.85% for the first three quarters and 89.53% for the third quarter alone; these company-wide figures are not attributed specifically to the new platform.