Researchers demonstrated wafer-scale monolayer molybdenum disulfide transistors with physical channels below 5 nanometers and 88 mV/decade subthreshold swing.

Semiconductor Engineering highlights research from Carnegie Mellon University, the University of Florida, MIT, Texas A&M University, and collaborators on wafer-scale monolayer molybdenum disulfide (MoS₂) transistors. The cited paper is titled “Wafer-scale 2D MoS₂ transistors with sub-5 nm channel length and subthreshold performance beyond the silicon limit.”

The supplied abstract reports physical channel lengths below 5 nanometers and a subthreshold swing of 88 millivolts per decade. The sub-5-nanometer measurement applies to the transistor’s physical channel, not a commercial process-node designation.

This is a reported research demonstration rather than a processor launch or foundry manufacturing announcement. The excerpt does not provide wafer diameter, manufacturing yield, operating voltage, circuit-level benchmarks, or commercial-production timing; the paper title’s silicon comparison is not accompanied by the underlying comparison data.