Swiss Federal Institute of Technology Lausanne (École Polytechnique Fédérale de Lausanne) researchers developed a gallium-nitride transistor tolerating nearly 4,000 volts while maintaining low resistance.

Researchers at the Swiss Federal Institute of Technology Lausanne, or École Polytechnique Fédérale de Lausanne, developed a new gallium-nitride transistor. The device was reported to tolerate nearly 4,000 volts while maintaining low resistance.

The work concerns a transistor for high-voltage power electronics, not a GPU, CPU or AI accelerator. The cited potential application areas include AI data centers, renewable-energy systems and electric vehicles.

The research was published in Nature Electronics. The source does not provide manufacturing-readiness, commercialization or deployment timelines.