Navitas Semiconductor (纳微半导体) secured a US Army Research Laboratory project developing 10-kilovolt silicon-carbide power semiconductors for defense applications.

Navitas Semiconductor (纳微半导体) said it received the US Army Research Laboratory’s ALATTIS project to develop next-generation 10-kilovolt silicon-carbide power semiconductor technology. The reported scope is defense-related power electronics, not GPUs, CPUs or AI accelerators.

The source expands ALATTIS as the accelerated large-area 10-kilovolt silicon-carbide insulated-gate bipolar transistor prototype project (加速型大面积 10 kV 碳化硅绝缘栅双极型晶体管原型项目). Its stated technical objective is to develop domestic manufacturing processes for 10-kilovolt silicon-carbide insulated-gate bipolar transistors and PIN diodes.

The report says funding comes from the Army Research Laboratory under the US Army Combat Capabilities Development Command framework, identified as DEVCOM, with JETX support. It explicitly notes that the announcement did not disclose contract value, duration or work location; the reported 22% after-hours share-price increase is a market reaction, not evidence of production or commercial revenue.