Sandia National Laboratories developed electro-thermo-chemical random-access memory (ETCRAM), an analog approach to storing information rather than conventional binary memory.

Sandia National Laboratories researchers developed electro-thermo-chemical random-access memory (ETCRAM), described in the supplied HPCwire material as an analog information-storage approach. The September 9 announcement was datelined Livermore, California.

The source contrasts ETCRAM with conventional digital memory, which represents information as ones and zeros on silicon. The development is therefore a memory-storage research result, rather than an announcement of a CPU, GPU, or complete computing system.

The announcement presents improved energy efficiency as a potential benefit, not a quantified result in the supplied excerpt. It gives no numerical measurements for energy per operation, storage density, endurance, retention, read/write speed, or commercial availability.